bcp 71m semiconductor group au -12-1998 1 npn silicon af power transistor preliminary data drain switch for rf power amplifier stages for af driver and output stages high collector current low collector-emitter saturation voltage vpw05980 1 2 3 5 4 type marking ordering code pin configuration package bcp 71m pcs q62702-c2597 1 = e 2 = c 3 = e sct-595 4 = b 5 = c maximum ratings parameter symbol value unit collector-emitter voltage v ceo 32 v collector-base voltage v cbo 32 emitter-base voltage v ebo 5 dc collector current i c 3 a peak collector current i cm 6 base current 200 ma i b peak base current i bm 500 total power dissipation, t s 94 c p tot 1.7 w junction temperature t j 150 c storage temperature t stg -65...+150 thermal resistance junction ambient 1) r thja 88 k/w junction - soldering point r thjs 33 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu semiconductor group 1 1998-11-01
bcp 71m semiconductor group au -12-1998 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol unit values typ. min. max. dc characteristics v v (br)ceo - - 32 collector-emitter breakdown voltage i c = 10 ma, i b = 0 v (br)cbo collector-base breakdown voltage i c = 100 a, i b = 0 - - 32 5 - - v (br)ebo emitter-base breakdown voltage i e = 10 a, i c = 0 collector cutoff current v cb = 8 v, i e = 0 i cbo - - 100 na collector cutoff current v cb = 8 v, i e = 0 , t a = 150 c i cbo - - 20 a emitter cutoff current v eb = 4 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 10 ma, v ce = 5 v i c = 500 ma, v ce = 1 v i c = 2 a, v ce = 2 v - 475 - - - - - h fe 25 85 50 collector-emitter saturation voltage1) i c = 2 a, i b = 0.2 a v - v cesat - 0.18 base-emitter saturation voltage 1) i c = 2 a, i b = 0.2 a - v 1.2 v besat - ac characteristics transition frequency i c = 50 ma, v ce = 10 v, f = 100 mhz f t - 100 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 80 - pf 1) pulse test: t < 300 m s; d < 2% semiconductor group 2 1998-11-01
bcp 71m semiconductor group au -12-1998 3 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 200 400 600 800 1000 1200 1400 1600 mw 2000 p tot t s t a permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 semiconductor group 3 1998-11-01
bcp 71m semiconductor group au -12-1998 4 dc current gain h fe = f ( i c ) v ce = 2v 10 0 10 1 10 2 10 3 10 4 ma i c 0 10 1 10 2 10 3 10 - h fe -50c 25c 100c collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 v 0.50 v cesat 0 10 1 10 2 10 3 10 4 10 ma i c 100c 25c -50c base-emitter saturation voltage i c = f ( v besat ), h fe = 10 0.0 0.2 0.4 0.6 0.8 1.0 v 1.3 v besat 0 10 1 10 2 10 3 10 4 10 ma i c -50c 25c 100c collector current i c = f ( v be ) v ce = 2v 0.0 0.2 0.4 0.6 0.8 1.0 v 1.3 v be 0 10 1 10 2 10 3 10 4 10 ma i c -50c 25c 100c semiconductor group 4 1998-11-01
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